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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | FL-S | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| RAM Technology Category | Non-Volatile | |
| Storage Media Type | FLASH | |
| Core Technology Platform | FLASH - NOR (SLC) | |
| Total Memory Bytes | 128Mbit | |
| Storage Layout Structure | 16M x 8 | |
| Data Access Bus | SPI - Quad I/O | |
| Timing Pulse Rate | 66 MHz | |
| Memory Write Speed Word/Page | 750µs | |
| Data Retrieval Speed | 6.5 ns | |
| Power Supply Voltage | 2.7V ~ 3.6V | |
| Ambient Temp Range | -40°C ~ 85°C (TA) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 16-SOIC (0.295", 7.50mm Width) | |
| Vendor Package Type | 16-SOIC |
Description
Provides data access speeds of 6.5 ns for effective data retrieval. Operates at a clock frequency of 66 MHz. Media format FLASH for data compatibility. Memory interface SPI - Quad I/O for performance and connectivity. Memory configuration 16M x 8 for efficient data access. Total memory size 128Mbit for device storage capability. Memory type Non-Volatile for efficiency and compatibility. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 85°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 16-SOIC (0.295", 7.50mm Width) that offers mechanical and thermal protection. Type of package 16-SOIC that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Classification series for the product or component FL-S. Supplier package type 16-SOIC for component selection. Voltage requirement 2.7V ~ 3.6V for electrical specifications. The primary technology platform FLASH - NOR (SLC) linked to the product category. Voltage supply 2.7V ~ 3.6V for device operation. Duration required to write each word or page 750µs for memory components.
