Description

Is capable of sustaining a continuous drain current (Id) of 7.3A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30 V. Supports the drive voltage noted at 4.5V, 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 28 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 28 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 550 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 550 pF @ 25 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SO that preserves the integrity of the device. The maximum power dissipation 2.5W (Tc) for efficient thermal management. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 28 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 30mOhm @ 7.3A, 10V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type 8-SO for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.