Description

Is capable of sustaining a continuous drain current (Id) of 6A (Ta), 13A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30 V. Supports the drive voltage noted at 4.5V, 10V for RdsOn control. Includes FET category defined as P-Channel. Ensures maximum 13 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 13 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 580 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 580 pF @ 25 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-PowerVDFN that offers mechanical and thermal protection. Type of package 6-PQFN (2x2) (DFN2020) that preserves the integrity of the device. The maximum power dissipation 2.1W (Ta) for efficient thermal management. Product status Last Time Buy concerning availability and lifecycle. Maximum Rds(on) at Id 13 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 37mOhm @ 7.8A, 10V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type 6-PQFN (2x2) (DFN2020) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 2.4V @ 25µA for MOSFET threshold specifications.