Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 3.6A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30 V. Supports the drive voltage noted at 4.5V, 10V for RdsOn control. Includes FET category defined as P-Channel. Ensures maximum 4.8 nC @ 4.5 V gate charge at Vgs for improved switching efficiency. Maintains 4.8 nC @ 4.5 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 388 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 388 pF @ 25 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Type of package Micro3™/SOT-23 that preserves the integrity of the device. The maximum power dissipation 1.3W (Ta) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 4.8 nC @ 4.5 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 64mOhm @ 3.6A, 10V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type Micro3™/SOT-23 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 2.4V @ 10µA for MOSFET threshold specifications.