Description

Is capable of sustaining a continuous drain current (Id) of 200mA (Tj) at 25°C. Supports a Vdss drain-to-source voltage rated at 60 V. Supports the drive voltage noted at 4.5V, 10V for RdsOn control. Includes FET category defined as N-Channel. The maximum input capacitance reaches 60 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 60 pF @ 25 V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bag for safeguarding or transporting components. Style of the enclosure/case TO-226-3, TO-92-3 (TO-226AA) that offers mechanical and thermal protection. Type of package TO-92-3 that preserves the integrity of the device. The maximum power dissipation 1W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 5Ohm @ 500mA, 10V for MOSFET specifications. Supplier package type TO-92-3 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±30V for MOSFET specifications. Maximum Vgs(th) at Id 3V @ 1mA for MOSFET threshold specifications.