Attribute
Description
Manufacturer Part Number
AFBR-S4K11C0125B
Manufacturer
Description
SENSOR PHOTODIODE 430NM 4FBGA
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line AFBR-S4K
IC Encapsulation Type Strip
Availability Status Obsolete
Light Wavelength nm 430nm
Vivid Color Option -
Light Spectrum Coverage -
Semiconductor Diode Category Avalanche
Sensitivity at Wavelength -
Activation Speed ms 110ps
Max Reverse DC Voltage 25.5 V
Typical Dark Current 11nA, 64nA
Functional Surface Area 1mm²
Display View Cone Degrees -
Ambient Temp Range -40°C ~ 60°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 4-FBGA, CSPBGA

Description

Features an active display area of 1mm² for improved visibility. Shows a typical dark current recorded at 11nA, 64nA. Shows the type of diode identified as Avalanche. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 60°C for environmental conditions impacting thermal efficiency. Type of housing Strip for safeguarding or transporting components. Style of the enclosure/case 4-FBGA, CSPBGA that offers mechanical and thermal protection. Product status Obsolete concerning availability and lifecycle. Time taken to respond 110ps for rapid operation or detection. Classification series for the product or component AFBR-S4K. Maximum reverse DC voltage 25.5 V for diode applications. Wavelength of light 430nm for RF or optical devices.