Attribute
Description
Manufacturer Part Number
OED-PPD11075G-B
Manufacturer
Description
SENSOR PHOTODIODE 1310NM TO46
Manufacturer Lead Time
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Light Wavelength nm | 1310nm | |
| Vivid Color Option | - | |
| Light Spectrum Coverage | 1100nm ~ 1600nm | |
| Semiconductor Diode Category | - | |
| Sensitivity at Wavelength | 0.9 A/W @ 1310nm | |
| Activation Speed ms | 300ps | |
| Max Reverse DC Voltage | 25 V | |
| Typical Dark Current | 300pA | |
| Functional Surface Area | 0.31mm² | |
| Display View Cone Degrees | - | |
| Ambient Temp Range | -40°C ~ 85°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | - |
Description
Features an active display area of 0.31mm² for improved visibility. Shows a typical dark current recorded at 300pA. Mounting configuration Through Hole for structural stability. Temperature range -40°C ~ 85°C for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Product status Obsolete concerning availability and lifecycle. Time taken to respond 300ps for rapid operation or detection. Sensitivity at wavelength 0.9 A/W @ 1310nm for optical detection. Wavelength range 1100nm ~ 1600nm for illumination or sensor applications. Maximum reverse DC voltage 25 V for diode applications. Wavelength of light 1310nm for RF or optical devices.
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